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Samsung M471B5273EB0-CK0 4GB
Kingston K6VDX7-HYD 8GB

Samsung M471B5273EB0-CK0 4GB vs Kingston K6VDX7-HYD 8GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.9 left arrow 7.2
    测试中的平均数值
Kingston K6VDX7-HYD 8GB 需要考虑的原因
Kingston K6VDX7-HYD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 40
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    13.5 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Kingston K6VDX7-HYD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 13.5
  • 写入速度，GB/s
    8.9 left arrow 7.2
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 2154

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Kingston K6VDX7-HYD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
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内存RAM
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SK Hynix V-GeN D4H4GL30A8TX5 4GB
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内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Kingston 9905624-044.A00G 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston K6VDX7-HYD 8GB
Kingston K6VDX7-HYD 8GB
内存RAM
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内存RAM
Kingston 9965516-112.A00LF 16GB
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内存RAM
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Kingston 9905471-001.A01LF 2GB
Jinyu 16GB
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内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
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内存RAM
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Kingston 9905403-134.A00LF 2GB
Micron Technology AFLD44EK2P 4GB
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内存RAM
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Chun Well Technology Holding Limited CL19-20-20 D4-3600
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
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Kingston 9905678-023.A00G 8GB
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内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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G Skill Intl F4-3466C16-4GVK 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
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Panram International Corporation W4U2666PS-8GC19 8GB
内存RAM