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Samsung M471B5273EB0-CK0 4GB
Kingston KHX3600C17D4/16GX 16GB

Samsung M471B5273EB0-CK0 4GB vs Kingston KHX3600C17D4/16GX 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Kingston KHX3600C17D4/16GX 16GB

Kingston KHX3600C17D4/16GX 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Kingston KHX3600C17D4/16GX 16GB 需要考虑的原因
Kingston KHX3600C17D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 40
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Kingston KHX3600C17D4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 28
  • 读取速度，GB/s
    12.3 left arrow 18.4
  • 写入速度，GB/s
    8.9 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 3785

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Kingston KHX3600C17D4/16GX 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
G Skill Intl F4-2400C15-8GRK 8GB
G Skill Intl F4-2400C15-8GRK 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 9905702-121.A00G 8GB
Kingston 9905702-121.A00G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C17-8GTZR 8GB
G Skill Intl F4-4000C17-8GTZR 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMSO32GX4M2A2133C15 16GB
Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMH16GX4M2D3600C18 8GB
Corsair CMH16GX4M2D3600C18 8GB
内存RAM