Samsung M471B5273EB0-CK0 4GB vs Micron Technology 36ASF4G72LZ-2G3B1 32GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

12.3 11.2

测试中的平均数值
更快的写入速度，GB/s

8.9 7.6

测试中的平均数值

Micron Technology 36ASF4G72LZ-2G3B1 32GB

需要考虑的原因
Micron Technology 36ASF4G72LZ-2G3B1 32GB

报告一个错误

低于PassMark测试中的延时，ns

34 40

左右 -18% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 34
读取速度，GB/s

12.3 11.2
写入速度，GB/s

8.9 7.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1789 2245

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2666C19-16GRS 16GB

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Kingston HX318C10FK/4 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Corsair CMR32GX4M4C3466C16 8GB

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Mushkin 99[2/7/4]205[F/T] 8GB

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Kingston 99U5429-007.A00LF 2GB

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Kingston 99U5584-007.A00LF 4GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

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Corsair CMH32GX4M2D3600C18 16GB

Corsair CMH32GX4M2D3600C18 16GB

Corsair CMH16GX4M2Z3600C18 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Samsung M393B1G70BH0-YK0 8GB

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Corsair CM4B8G1J2800K14K 8GB

Corsair CM4B8G1J2800K14K 8GB