Samsung M471B5273EB0-CK0 4GB vs Mushkin 99[2/7/4]191[F/T] 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Mushkin 99[2/7/4]191[F/T] 4GB

需要考虑的原因
Mushkin 99[2/7/4]191[F/T] 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

14.5 12.3

测试中的平均数值
更快的写入速度，GB/s

10.1 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 26
读取速度，GB/s

12.3 14.5
写入速度，GB/s

8.9 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2480

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M4K4266C19 8GB

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Avant Technology F641GU67F9333G 8GB

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SK Hynix HMA851U6CJR6N-UH 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Team Group Inc. TEAMGROUP-UD4-4133 8GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston KHX2666C15S4/16G 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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G Skill Intl F4-3200C16-16GTRS 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M378B1G73EB0-YK0 8GB