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Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Samsung M471B5273EB0-CK0 4GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Patriot Memory (PDP Systems) 3000 C18 Series 16GB 需要考虑的原因
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 40
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 36
  • 读取速度，GB/s
    12.3 left arrow 15.5
  • 写入速度，GB/s
    8.9 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 3050

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
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Crucial Technology CT51264BA1339.C16F 4GB
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G Skill Intl F4-2800C15-8GVRB 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston HP32D4S2S1ME-4 4GB
Kingston HP32D4S2S1ME-4 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
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Corsair CM4X16GC3000C15K4 16GB
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SK Hynix HYMP112U64CP8-S6 1GB
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Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
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Crucial Technology CB16GS2666.C8ET 16GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
内存RAM
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
内存RAM
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内存RAM
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内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
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Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
G Skill Intl F3-14900CL10-8GBXL 8GB
G Skill Intl F3-14900CL10-8GBXL 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
内存RAM