Samsung M471B5673FH0-CF8 2GB vs Apacer Technology 78.BAGNF.40C0B 4GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Apacer Technology 78.BAGNF.40C0B 4GB

Apacer Technology 78.BAGNF.40C0B 4GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 60

左右 50% 更低的延时

Apacer Technology 78.BAGNF.40C0B 4GB

需要考虑的原因
Apacer Technology 78.BAGNF.40C0B 4GB

报告一个错误

更快的读取速度，GB/s

18 10.6

测试中的平均数值
更快的写入速度，GB/s

9.3 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Apacer Technology 78.BAGNF.40C0B 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 60
读取速度，GB/s

10.6 18.0
写入速度，GB/s

6.8 9.3
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2004

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273CH0-CH9 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT8G4DFD824A.C16FE 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 99U5701-036.A00G 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

Micron Technology V-GeN D4V16GL24A8R 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

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Kingston SNY1600S11-4G-EDEG 4GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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