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Samsung M471B5673FH0-CF8 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB

Samsung M471B5673FH0-CF8 2GB vs Apacer Technology 78.C1GS7.AUC0B 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Apacer Technology 78.C1GS7.AUC0B 8GB 需要考虑的原因
Apacer Technology 78.C1GS7.AUC0B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 30
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 21
  • 读取速度，GB/s
    10.6 left arrow 18.4
  • 写入速度，GB/s
    6.8 left arrow 14.4
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3305

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Apacer Technology 78.C1GS7.AUC0B 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
Golden Empire 2GB DDR2 800 CAS=4 2GB
Golden Empire 2GB DDR2 800 CAS=4 2GB
Corsair CMD32GX4M2A2800C16 16GB
Corsair CMD32GX4M2A2800C16 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology C 8GB
Crucial Technology C 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMK16GX4M2A2400C16 8GB
Corsair CMK16GX4M2A2400C16 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-16GVS 16GB
G Skill Intl F4-3200C16-16GVS 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Avant Technology W642GU42J9266N8 16GB
Avant Technology W642GU42J9266N8 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
内存RAM