Samsung M471B5673FH0-CF8 2GB vs Avant Technology W641GU42J9266NC 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Avant Technology W641GU42J9266NC 8GB

Avant Technology W641GU42J9266NC 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Avant Technology W641GU42J9266NC 8GB

需要考虑的原因
Avant Technology W641GU42J9266NC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 30

左右 -36% 更低的延时
更快的读取速度，GB/s

17.7 10.6

测试中的平均数值
更快的写入速度，GB/s

13.7 6.8

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Avant Technology W641GU42J9266NC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 22
读取速度，GB/s

10.6 17.7
写入速度，GB/s

6.8 13.7
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 3096

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Panram International Corporation PUD42133C154G2VS 4GB

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Samsung M471B5674QH0-YK0 2GB

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Crucial Technology CT16G4DFD824A.C16FE 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB