Samsung M471B5673FH0-CF8 2GB vs Corsair CMK16GX4M2B3000C15 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Corsair CMK16GX4M2B3000C15 8GB

需要考虑的原因
Corsair CMK16GX4M2B3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 -3% 更低的延时
更快的读取速度，GB/s

17.9 10.6

测试中的平均数值
更快的写入速度，GB/s

13.8 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Corsair CMK16GX4M2B3000C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 29
读取速度，GB/s

10.6 17.9
写入速度，GB/s

6.8 13.8
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 3336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D240FSC.16FBR2 8GB

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Corsair CMSX32GX4M2A3200C22 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMD16GX4M2B3866C18 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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A-DATA Technology DDR4 2400 16GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB