Samsung M471B5673FH0-CF8 2GB vs Corsair CMV16GX4M1L2400C16 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Corsair CMV16GX4M1L2400C16 16GB

需要考虑的原因
Corsair CMV16GX4M1L2400C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 -20% 更低的延时
更快的读取速度，GB/s

15.5 10.6

测试中的平均数值
更快的写入速度，GB/s

7.6 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Corsair CMV16GX4M1L2400C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 25
读取速度，GB/s

10.6 15.5
写入速度，GB/s

6.8 7.6
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1479 2364

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Avant Technology J642GU42J5213N2 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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G Skill Intl F4-3000C14-8GTZ 8GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Ramaxel Technology RMUA5120MB86H9F2400 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston KHX2400C14D4/16G 16GB

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Kingston 99U5458-002.A00LF 2GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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Gloway International Co. Ltd. STK4U2400D17082C 8GB

Kingston 9905469-153.A00LF 4GB

Kingston 9905469-153.A00LF 4GB

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Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Essencore Limited KD48GU880-36A180U 8GB

Essencore Limited KD48GU880-36A180U 8GB

Kingston 99U5471-012.A00 4GB

Kingston 99U5471-012.A00 4GB

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

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Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB