Samsung M471B5673FH0-CF8 2GB vs Corsair CMWX16GC3200C16W2E 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Corsair CMWX16GC3200C16W2E 16GB

Corsair CMWX16GC3200C16W2E 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Corsair CMWX16GC3200C16W2E 16GB

需要考虑的原因
Corsair CMWX16GC3200C16W2E 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 -7% 更低的延时
更快的读取速度，GB/s

17.6 10.6

测试中的平均数值
更快的写入速度，GB/s

15.4 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Corsair CMWX16GC3200C16W2E 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 28
读取速度，GB/s

10.6 17.6
写入速度，GB/s

6.8 15.4
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 3705

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Super Talent F24EB8GS 8GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

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Samsung M393B1G70BH0-YK0 8GB

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Corsair CMSX32GX4M2A3200C22 16GB

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Kingston 9905471-001.A01LF 2GB

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Apacer Technology 78.BAGM6.40C0B 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston K531R8-MIN 4GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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G Skill Intl F4-3000C15-16GVR 16GB

G Skill Intl F4-3000C15-16GVR 16GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Kingston 9905678-014.A00G 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Essencore Limited KD48GU880-34A170X 8GB

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