Samsung M471B5673FH0-CF8 2GB vs Crucial Technology BLM16G44C19U4BL.M8FB 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

需要考虑的原因
Crucial Technology BLM16G44C19U4BL.M8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 -20% 更低的延时
更快的读取速度，GB/s

18.3 10.6

测试中的平均数值
更快的写入速度，GB/s

16.7 6.8

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 25
读取速度，GB/s

10.6 18.3
写入速度，GB/s

6.8 16.7
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 3911

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Apacer Technology 78.CAGN7.4000C 8GB

Apacer Technology 78.CAGN7.4000C 8GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905702-006.A00G 8GB

Kingston 9905702-006.A00G 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B5173BH0-YK0 4GB

Samsung M471B5173BH0-YK0 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB