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Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB

Samsung M471B5673FH0-CF8 2GB vs Crucial Technology CT4G4DFS824A.C8FADP 4GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Crucial Technology CT4G4DFS824A.C8FADP 4GB 需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FADP 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 25
  • 读取速度，GB/s
    10.6 left arrow 16.0
  • 写入速度，GB/s
    6.8 left arrow 11.0
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2544

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR16D3LS1NGG/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9905471-076.A00LF 8GB
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Samsung M378A4G43AB2-CVF 32GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KYXC0V-MIH 16GB
Kingston KYXC0V-MIH 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Corsair CMK16GX4M2D3600C16 8GB
Corsair CMK16GX4M2D3600C16 8GB
内存RAM
SK Hynix HMT451S6AFR8A-PB 4GB
SK Hynix HMT451S6AFR8A-PB 4GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
内存RAM
Crucial Technology CT102464BA1339.M16 8GB
Crucial Technology CT102464BA1339.M16 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Kingston HP32D4U2S1ME-8 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
内存RAM
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Kingston 9905625-029.A00G 8GB
Kingston 9905625-029.A00G 8GB
内存RAM