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Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB

Samsung M471B5673FH0-CF8 2GB vs Crucial Technology CT8G4DFD8213.C16FHP 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Crucial Technology CT8G4DFD8213.C16FHP 8GB 需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FHP 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.2 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 30
  • 读取速度，GB/s
    10.6 left arrow 15.2
  • 写入速度，GB/s
    6.8 left arrow 9.0
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2355

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB RAM的比较

Corsair CM4X4GF3000C15K4 4GB
Kingston KYXC0V-MIB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Team Group Inc. Team-Elite-1333 4GB
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A-DATA Technology AM1P26KC8T1-BAAS 8GB
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Kingston 99U5471-052.A00LF 8GB
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Lexar Co Limited LD4AU016G-H3200GST 16GB
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Kingston 99U5474-013.A00LF 2GB
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UMAX Technology D4-2133-4GB-512X8-L 4GB
内存RAM
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Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
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内存RAM
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内存RAM
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Kingston 9905702-010.A00G 8GB
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内存RAM