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Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3000C14-16GVKD 16GB

Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-3000C14-16GVKD 16GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
G Skill Intl F4-3000C14-16GVKD 16GB 需要考虑的原因
G Skill Intl F4-3000C14-16GVKD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3000C14-16GVKD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 29
  • 读取速度，GB/s
    10.6 left arrow 13.4
  • 写入速度，GB/s
    6.8 left arrow 10.3
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2832

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

G Skill Intl F4-3000C14-16GVKD 16GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA81GR7AFR8N-UH 8GB
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内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
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Roa Logic BV iGame DDR4 8G 3000 8GB
内存RAM
Corsair CMK16GX4M2A2400C14 8GB
Corsair CMK16GX4M2A2400C14 8GB
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Crucial Technology CT2K102464BD160B 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMT16GX4M2C3200C16 8GB
Corsair CMT16GX4M2C3200C16 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
Nanya Technology M2Y51264TU88A2B-3C 512MB
Nanya Technology M2Y51264TU88A2B-3C 512MB
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Kingston 9965596-019.B01G 4GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston KHX2400C15/8G 8GB
Kingston KHX2400C15/8G 8GB
内存RAM