Samsung M471B5673FH0-CF8 2GB vs Kingston 9965604-016.C01G 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Kingston 9965604-016.C01G 8GB

Kingston 9965604-016.C01G 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Kingston 9965604-016.C01G 8GB

需要考虑的原因
Kingston 9965604-016.C01G 8GB

报告一个错误

更快的读取速度，GB/s

11.3 10.6

测试中的平均数值
更快的写入速度，GB/s

10.0 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Kingston 9965604-016.C01G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 30
读取速度，GB/s

10.6 11.3
写入速度，GB/s

6.8 10.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2580

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T5160QZ4-CE66 2GB

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Crucial Technology BLS16G4D26BFST.16FD 16GB

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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

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Corsair CMX4GX3M1A1333C9 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Samsung M3 78T2863EHS-CF7 1GB

Apacer Technology 78.C1GS7.DFW0C 8GB

Apacer Technology 78.C1GS7.DFW0C 8GB

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Samsung M386B4G70DM0-CMA4 32GB

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

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G Skill Intl F4-4400C16-8GTRS 8GB

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Samsung M393B5170FH0-CH9 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

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Samsung M393B5170FH0-CK0 4GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB