Samsung M471B5673FH0-CF8 2GB vs Kingston 9965669-009.A00G 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Kingston 9965669-009.A00G 8GB

Kingston 9965669-009.A00G 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 33

左右 9% 更低的延时
更快的读取速度，GB/s

10.6 10.3

测试中的平均数值

Kingston 9965669-009.A00G 8GB

需要考虑的原因
Kingston 9965669-009.A00G 8GB

报告一个错误

更快的写入速度，GB/s

8.3 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Kingston 9965669-009.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 33
读取速度，GB/s

10.6 10.3
写入速度，GB/s

6.8 8.3
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.C1GMW.AUC0B 8GB

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Micron Technology 72ASS4G72LZ-2G1A1 32GB

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Micron Technology ILG8GS2400A 8GB

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Samsung M393B1K70CH0-YH9 8GB

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SK Hynix HMAA2GU6CJR8N-XN 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Crucial Technology BL8G32C16U4RL.M8FE1 8GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

Samsung M393B1K70QB0-CK0 8GB

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Avant Technology J642GU42J9266NF 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB