Samsung M471B5674QH0-YK0 2GB vs Corsair CMK16GX4M2B3200C16 8GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

差异规格评论

差异

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

Corsair CMK16GX4M2B3200C16 8GB

需要考虑的原因
Corsair CMK16GX4M2B3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 -36% 更低的延时
更快的读取速度，GB/s

18.3 7.2

测试中的平均数值
更快的写入速度，GB/s

14.5 3.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5674QH0-YK0 2GB

Corsair CMK16GX4M2B3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 28
读取速度，GB/s

7.2 18.3
写入速度，GB/s

3.0 14.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

915 3454

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSBK.8FD 8GB

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Kingston KHX1600C9D3/4G 4GB

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Samsung M471B5674QH0-YK0 2GB

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Corsair CMK16GX4M2B3200C16 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Kingston 9965525-018.A00LF 4GB

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V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Mushkin 99[2/7/4]204[F/T] 4GB

Mushkin 99[2/7/4]204[F/T] 4GB

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Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB