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Samsung M471B5674QH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB

Samsung M471B5674QH0-YK0 2GB vs Micron Technology 4KTF25664HZ-1G6E1 2GB

总分
star star star star star
Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分
star star star star star
Micron Technology 4KTF25664HZ-1G6E1 2GB

Micron Technology 4KTF25664HZ-1G6E1 2GB

差异 规格 评论

差异

Samsung M471B5674QH0-YK0 2GB 需要考虑的原因
Samsung M471B5674QH0-YK0 2GB
报告一个错误
Micron Technology 4KTF25664HZ-1G6E1 2GB 需要考虑的原因
Micron Technology 4KTF25664HZ-1G6E1 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    14.1 left arrow 7.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 3.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471B5674QH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    38 left arrow 27
  • 读取速度，GB/s
    7.2 left arrow 14.1
  • 写入速度，GB/s
    3.0 left arrow 8.7
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    915 left arrow 2207

Samsung M471B5674QH0-YK0 2GB RAM的比较

Samsung M471B5773DH0-YK0 2GB

Micron Technology 4KTF25664HZ-1G6E1 2GB RAM的比较

A-DATA Technology 11137401 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905744-035.A00G 16GB
Kingston 9905744-035.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2Z2933C16 8GB
Corsair CMK16GX4M2Z2933C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3200C14 4GB
Corsair CMD16GX4M4B3200C14 4GB
内存RAM
Micron Technology 4KTF25664HZ-1G6E1 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB
A-DATA Technology 11137401 8GB
A-DATA Technology 11137401 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston XJ69DF-MIE 8GB
Kingston XJ69DF-MIE 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Mushkin 99[2/7/4]189F 4GB
Mushkin 99[2/7/4]189F 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMK16GX4M2D2400C14 8GB
Corsair CMK16GX4M2D2400C14 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMR16GX4M2C3600C18 8GB
Corsair CMR16GX4M2C3600C18 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMD64GX4M8X4000C19 8GB
Corsair CMD64GX4M8X4000C19 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 99U5700-028.A00G 8GB
Kingston 99U5700-028.A00G 8GB
内存RAM