Samsung M471B5773DH0-CH9 2GB vs Corsair CMK16GX4M2K3600C19 8GB

总分

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

差异规格评论

差异

Samsung M471B5773DH0-CH9 2GB

需要考虑的原因
Samsung M471B5773DH0-CH9 2GB

报告一个错误

Corsair CMK16GX4M2K3600C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K3600C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 -48% 更低的延时
更快的读取速度，GB/s

17 11

测试中的平均数值
更快的写入速度，GB/s

13.6 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CH9 2GB

Corsair CMK16GX4M2K3600C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 29
读取速度，GB/s

11.0 17.0
写入速度，GB/s

7.2 13.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1393 3408

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F3-2133C9-4GAB 4GB

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Apacer Technology D12.2344DT.001 4GB

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Kingston 99U5743-031.A00G 16GB

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Kingston 9905469-143.A00LF 4GB

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SK Hynix HMA851S6AFR6N-UH 4GB

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Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB