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Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Samsung M471B5773DH0-CH9 2GB vs Crucial Technology BLS8G4D240FSEK.8FBD 8GB

总分
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分
star star star star star
Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

差异 规格 评论

差异

Samsung M471B5773DH0-CH9 2GB 需要考虑的原因
Samsung M471B5773DH0-CH9 2GB
报告一个错误
Crucial Technology BLS8G4D240FSEK.8FBD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 43
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 31
  • 读取速度，GB/s
    11.0 left arrow 15.1
  • 写入速度，GB/s
    7.2 left arrow 9.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1393 left arrow 2701

Samsung M471B5773DH0-CH9 2GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMX4GX3M1A1333C9 4GB
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内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
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Asgard VMA41UG-MEC1U2AW1 8GB
内存RAM
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内存RAM
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Apacer Technology 78.C2GFP.C700B 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C16-8GVRB 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Corsair CMT32GX4M4C3200C14 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
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内存RAM
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Unifosa Corporation HU564404EP0200 4GB
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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
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Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM