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Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

Samsung M471B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

总分
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

差异 规格 评论

差异

Samsung M471B5773DH0-CH9 2GB 需要考虑的原因
Samsung M471B5773DH0-CH9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    11 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.2 left arrow 6.1
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 43
    左右 -54% 更低的延时
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 28
  • 读取速度，GB/s
    11.0 left arrow 10.7
  • 写入速度，GB/s
    7.2 left arrow 6.1
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1393 left arrow 1720

Samsung M471B5773DH0-CH9 2GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB RAM的比较

SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT351S6CFR8C-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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