Samsung M471B5773DH0-CK0 2GB vs Crucial Technology CT4G4SFS8213.C8FHP 4GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

Crucial Technology CT4G4SFS8213.C8FHP 4GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

Crucial Technology CT4G4SFS8213.C8FHP 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FHP 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

14.6 12.2

测试中的平均数值
更快的写入速度，GB/s

10.0 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

12.2 14.6
写入速度，GB/s

7.8 10.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1763 2389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-8GTZKY 8GB

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Samsung M378T5663QZ3-CF7 2GB

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Transcend Information JM3200HLG-8G 8GB

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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AMD R5316G1609U2K 8GB

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Micron Technology M471A1K43BB1-CRC 8GB

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Team Group Inc. Team--Elite-1600 4GB

Team Group Inc. Team--Elite-1600 4GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

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Samsung M393B5270CH0-CH9 4GB

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Corsair CMK16GX4M2C3200C16 8GB

Corsair CMK16GX4M2C3200C16 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB