Samsung M471B5773DH0-CK0 2GB vs Kingston CBD26D4S9D8ME-16 16GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

Kingston CBD26D4S9D8ME-16 16GB

Kingston CBD26D4S9D8ME-16 16GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

Kingston CBD26D4S9D8ME-16 16GB

需要考虑的原因
Kingston CBD26D4S9D8ME-16 16GB

报告一个错误

更快的读取速度，GB/s

15.5 12.2

测试中的平均数值
更快的写入速度，GB/s

9.1 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

Kingston CBD26D4S9D8ME-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

12.2 15.5
写入速度，GB/s

7.8 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1763 2612

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4266C19-4GTZ 4GB

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Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Kingston CBD26D4S9D8ME-16 16GB

Kingston CBD26D4S9D8ME-16 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CM4X16GC3000C16K4D 16GB

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Kingston 9965525-140.A00LF 8GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Maxsun MSD48G26Q3 8GB

Maxsun MSD48G26Q3 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

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G Skill Intl F4-3333C16-4GRRD 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB