Samsung M471B5773DH0-CK0 2GB vs Micron Technology 16ATF4G64HZ-2G6B4 32GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Micron Technology 16ATF4G64HZ-2G6B4 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B4 32GB

报告一个错误

更快的读取速度，GB/s

15.9 12.2

测试中的平均数值
更快的写入速度，GB/s

15.1 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

12.2 15.9
写入速度，GB/s

7.8 15.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1763 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSO32GX4M2A2133C15 16GB

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Samsung M378B5273CH0-CH9 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

Apacer Technology 78.CAGR4.DFC0B 8GB

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Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB

Kingston 9965516-112.A00LF 16GB

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Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

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Kingston KF548C38-16 16GB

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Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

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