SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Corsair CMD32GX4M4C3466C16W 8GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Corsair CMD32GX4M4C3466C16W 8GB

Corsair CMD32GX4M4C3466C16W 8GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Corsair CMD32GX4M4C3466C16W 8GB

需要考虑的原因
Corsair CMD32GX4M4C3466C16W 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 46

左右 -130% 更低的延时
更快的读取速度，GB/s

20.3 14.2

测试中的平均数值
更快的写入速度，GB/s

16.3 13.6

测试中的平均数值

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Corsair CMD32GX4M4C3466C16W 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 20
读取速度，GB/s

14.2 20.3
写入速度，GB/s

13.6 16.3
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2717 3708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Corsair CMD32GX4M4C3466C16W 8GB

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Samsung M471B5273EB0-CK0 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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V-Color Technology Inc. TA48G32S816SK 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston KHX3600C18D4/32GX 32GB

Kingston KHX3600C18D4/32GX 32GB