SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Kingston 9905624-043.A00G 8GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

Kingston 9905624-043.A00G 8GB

需要考虑的原因
Kingston 9905624-043.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的读取速度，GB/s

17.8 14.2

测试中的平均数值
更快的写入速度，GB/s

13.7 13.6

测试中的平均数值

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Kingston 9905624-043.A00G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

14.2 17.8
写入速度，GB/s

13.6 13.7
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2717 3077

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4B3300C16 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Samsung M386A2G40DB0-CPB 16GB

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3300C16-16GTZ 16GB

G Skill Intl F4-3300C16-16GTZ 16GB