SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Kingston KHX2666C16D4/4G 4GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Kingston KHX2666C16D4/4G 4GB

Kingston KHX2666C16D4/4G 4GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

Kingston KHX2666C16D4/4G 4GB

需要考虑的原因
Kingston KHX2666C16D4/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的读取速度，GB/s

16.9 14.2

测试中的平均数值
更快的写入速度，GB/s

13.9 13.6

测试中的平均数值

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Kingston KHX2666C16D4/4G 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

14.2 16.9
写入速度，GB/s

13.6 13.9
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2717 3093

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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G Skill Intl F4-3200C14-8GTZKO 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F4-4000C17-8GTZRB 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB