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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
比较
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB
总分
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
总分
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
更快的读取速度,GB/s
14.2
7.7
测试中的平均数值
更快的写入速度,GB/s
13.6
7.6
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
报告一个错误
低于PassMark测试中的延时,ns
41
46
左右 -12% 更低的延时
规格
完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
46
41
读取速度,GB/s
14.2
7.7
写入速度,GB/s
13.6
7.6
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2717
1855
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-1333C9-4GIS 4GB
Kingston KF3600C16D4/8GX 8GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. DDR4 3000 4GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-2933C16-8GFX 8GB
Corsair CM5S16GM4800A40K2 16GB
Samsung M471A2K43BB1-CTD 16GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
G Skill Intl F4-4000C19-8GTZKW 8GB
Kingston 9905584-016.A00LF 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
takeMS International AG TMS2GB264D083805EV 2GB
Avant Technology J644GU44J2320NQ 32GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
报告一个错误
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Bug description
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