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takeMS International AG TMS2GB264D083805EV 2GB
Avant Technology J644GU44J2320NQ 32GB

takeMS International AG TMS2GB264D083805EV 2GB vs Avant Technology J644GU44J2320NQ 32GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Avant Technology J644GU44J2320NQ 32GB

Avant Technology J644GU44J2320NQ 32GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.8
    测试中的平均数值
Avant Technology J644GU44J2320NQ 32GB 需要考虑的原因
Avant Technology J644GU44J2320NQ 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 50
    左右 -16% 更低的延时
  • 更快的写入速度，GB/s
    15.4 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Avant Technology J644GU44J2320NQ 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 43
  • 读取速度，GB/s
    3,757.3 left arrow 16.8
  • 写入速度，GB/s
    1,457.4 left arrow 15.4
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    557 left arrow 3282

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Avant Technology J644GU44J2320NQ 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Avant Technology J644GU44J2320NQ 32GB
Avant Technology J644GU44J2320NQ 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
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内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Apacer Technology 78.D2GG7.AU30B 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
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内存RAM
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Samsung M378B5673EH1-CF8 2GB
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Patriot Memory (PDP Systems) PSD48G26662 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
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Avant Technology W6451U66J5213ND 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
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内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3600C16-16GTZN 16GB
G Skill Intl F4-3600C16-16GTZN 16GB
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