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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M378A5244BB0-CRC 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Samsung M378A5244BB0-CRC 4GB

总分
star star star star star
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分
star star star star star
Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

差异 规格 评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB 需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.6 left arrow 11.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Samsung M378A5244BB0-CRC 4GB 需要考虑的原因
Samsung M378A5244BB0-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 46
    左右 -64% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 14.2
    测试中的平均数值

规格

完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M378A5244BB0-CRC 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 28
  • 读取速度，GB/s
    14.2 left arrow 16.0
  • 写入速度，GB/s
    13.6 left arrow 11.3
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2717 left arrow 2436

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M378A5244BB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-2400C15-8GIS 8GB
G Skill Intl F4-2400C15-8GIS 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMK8GX4M1D3000C16 8GB
Corsair CMK8GX4M1D3000C16 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CM4X4GD3000C16K2 4GB
Corsair CM4X4GD3000C16K2 4GB
内存RAM