Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Gloway International Co. Ltd. TYA4U3000E16081C 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

差异规格评论

差异

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 66

左右 67% 更低的延时
更快的读取速度，GB/s

17.7 15.9

测试中的平均数值
更快的写入速度，GB/s

12.7 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYA4U3000E16081C 8GB

报告一个错误

规格

完整的技术规格清单

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

22 66
读取速度，GB/s

17.7 15.9
写入速度，GB/s

12.7 7.9
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3075 1877

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-4400C19-32GVK 32GB

G Skill Intl F4-4400C19-32GVK 32GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Apacer Technology GD2.111881.002 4GB

Apacer Technology GD2.111881.002 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3300C16-8GTZ 8GB

G Skill Intl F4-3300C16-8GTZ 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB