SK Hynix DDR2 800 2G 2GB vs Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 14.4

测试中的平均数值

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

需要考虑的原因
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 77

左右 -235% 更低的延时
更快的写入速度，GB/s

7.3 1,884.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 23
读取速度，GB/s

2,936.9 14.4
写入速度，GB/s

1,884.0 7.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

564 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-16GTZ 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Apacer Technology 78.D2GF2.AU30B 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology BLS8G4D240FSA.16FAR 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Team Group Inc. DDR4 3000 4GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Apacer Technology GD2.1831WS.002 16GB

Apacer Technology GD2.1831WS.002 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

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Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3333C16-16GVR 16GB

G Skill Intl F4-3333C16-16GVR 16GB

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Kingston 9905783-025.A01G 16GB