SK Hynix DDR2 800 2G 2GB vs Corsair CMK16GX4M2C3000C15 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Corsair CMK16GX4M2C3000C15 8GB

Corsair CMK16GX4M2C3000C15 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 16.5

测试中的平均数值

Corsair CMK16GX4M2C3000C15 8GB

需要考虑的原因
Corsair CMK16GX4M2C3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 -175% 更低的延时
更快的写入速度，GB/s

12.5 1,884.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Corsair CMK16GX4M2C3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 28
读取速度，GB/s

2,936.9 16.5
写入速度，GB/s

1,884.0 12.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

564 3128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Corsair CMK16GX4M2C3000C15 8GB

Corsair CMK16GX4M2C3000C15 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston 9905630-005.A00G 8GB

Kingston 9905630-005.A00G 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4400C19-32GTZR 32GB

G Skill Intl F4-4400C19-32GTZR 32GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB