SK Hynix DDR2 800 2G 2GB vs Corsair CMSX16GX4M2A2400C16 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Corsair CMSX16GX4M2A2400C16 8GB

Corsair CMSX16GX4M2A2400C16 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 15.4

测试中的平均数值

Corsair CMSX16GX4M2A2400C16 8GB

需要考虑的原因
Corsair CMSX16GX4M2A2400C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 77

左右 -126% 更低的延时
更快的写入速度，GB/s

12.0 1,884.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Corsair CMSX16GX4M2A2400C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 34
读取速度，GB/s

2,936.9 15.4
写入速度，GB/s

1,884.0 12.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

564 2791

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Chun Well Technology Holding Limited D4U0836181B 8GB

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SK Hynix DDR2 800 2G 2GB

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

SK Hynix DDR2 800 2G 2GB

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Crucial Technology CT16G4SFD824A.C16FJ 16GB

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Samsung 1600 CL10 Series 8GB

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Kingston 9905599-025.A00G 8GB

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Kingston 99U5584-004.A00LF 4GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CM4X4GD3000C15K4 4GB

Corsair CM4X4GD3000C15K4 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

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G Skill Intl F4-3733C17-8GTZKW 8GB