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SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology BLE4G4D26AFEA.8FADG 4GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology BLE4G4D26AFEA.8FADG 4GB

Crucial Technology BLE4G4D26AFEA.8FADG 4GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.4
    测试中的平均数值
Crucial Technology BLE4G4D26AFEA.8FADG 4GB 需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 77
    左右 -148% 更低的延时
  • 更快的写入速度，GB/s
    12.4 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 31
  • 读取速度，GB/s
    2,936.9 left arrow 16.4
  • 写入速度，GB/s
    1,884.0 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3042

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology BLE4G4D26AFEA.8FADG 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4C3333C16 8GB
Corsair CMK32GX4M4C3333C16 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung M393A2K43BB1-CRCA1 16GB
Samsung M393A2K43BB1-CRCA1 16GB
内存RAM
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMV8GX4M1A2133C15 8GB
Corsair CMV8GX4M1A2133C15 8GB
内存RAM
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Kingston KHX2666C16D4/16GX 16GB
Kingston KHX2666C16D4/16GX 16GB
Kingston KHX3200C16D4/16GX 16GB
Kingston KHX3200C16D4/16GX 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM