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SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology BLS8G4D240FSCK.8FD 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17
    测试中的平均数值
Crucial Technology BLS8G4D240FSCK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSCK.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 77
    左右 -250% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 22
  • 读取速度，GB/s
    2,936.9 left arrow 17.0
  • 写入速度，GB/s
    1,884.0 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2942

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
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内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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A-DATA Technology ADOVE1A0834E 1GB
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Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM