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SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4SFS8266.M8FD 8GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology CT8G4SFS8266.M8FD 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.2
    测试中的平均数值
Crucial Technology CT8G4SFS8266.M8FD 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8266.M8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 77
    左右 -120% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 35
  • 读取速度，GB/s
    2,936.9 left arrow 15.2
  • 写入速度，GB/s
    1,884.0 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2571

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9965669-009.A00G 8GB
Kingston 9965669-009.A00G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston 9965669-017.A00G 16GB
Kingston 9965669-017.A00G 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Apacer Technology D12.2324WT.001 8GB
Apacer Technology D12.2324WT.001 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
内存RAM