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SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2666C18-32GTZN 32GB

SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-2666C18-32GTZN 32GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 19.1
    测试中的平均数值
G Skill Intl F4-2666C18-32GTZN 32GB 需要考虑的原因
G Skill Intl F4-2666C18-32GTZN 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 77
    左右 -148% 更低的延时
  • 更快的写入速度，GB/s
    15.5 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 31
  • 读取速度，GB/s
    2,936.9 left arrow 19.1
  • 写入速度，GB/s
    1,884.0 left arrow 15.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3753

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

G Skill Intl F4-2666C18-32GTZN 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9965662-019.A00G 32GB
Kingston 9965662-019.A00G 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 9905744-027.A00G 16GB
Kingston 9905744-027.A00G 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-3600C18-8GTRS 8GB
G Skill Intl F4-3600C18-8GTRS 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Avant Technology W641GU67J5213N8 8GB
Avant Technology W641GU67J5213N8 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905701-131.A00G 16GB
Kingston 9905701-131.A00G 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston 9965639-002.A01G 8GB
Kingston 9965639-002.A01G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-3333C16-4GRKD 4GB
G Skill Intl F4-3333C16-4GRKD 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM
Samsung M2S4G64CB8HD5N-CG 4GB
Samsung M2S4G64CB8HD5N-CG 4GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM