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SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB

SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-3200C16-16GSXFB 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.5
    测试中的平均数值
G Skill Intl F4-3200C16-16GSXFB 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GSXFB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 77
    左右 -250% 更低的延时
  • 更快的写入速度，GB/s
    14.2 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 22
  • 读取速度，GB/s
    2,936.9 left arrow 18.5
  • 写入速度，GB/s
    1,884.0 left arrow 14.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3392

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

G Skill Intl F4-3200C16-16GSXFB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
内存RAM
Corsair CM3B4G2C1600L9 4GB
Corsair CM3B4G2C1600L9 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
SK Hynix HMA82GR7MFR8N-UH 16GB
SK Hynix HMA82GR7MFR8N-UH 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905678-044.A00G 8GB
Kingston 9905678-044.A00G 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Crucial Technology CT16G4S24AM.M16FE 16GB
内存RAM