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SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C16-16GVKC 16GB

SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-3600C16-16GVKC 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
G Skill Intl F4-3600C16-16GVKC 16GB

G Skill Intl F4-3600C16-16GVKC 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 19.2
    测试中的平均数值
G Skill Intl F4-3600C16-16GVKC 16GB 需要考虑的原因
G Skill Intl F4-3600C16-16GVKC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 77
    左右 -175% 更低的延时
  • 更快的写入速度，GB/s
    16.0 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C16-16GVKC 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 28
  • 读取速度，GB/s
    2,936.9 left arrow 19.2
  • 写入速度，GB/s
    1,884.0 left arrow 16.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3800

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

G Skill Intl F4-3600C16-16GVKC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Kingston KMKYF9-MID 8GB
Kingston KMKYF9-MID 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C14-16GTRS 16GB
G Skill Intl F4-3200C14-16GTRS 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Kingston HP32D4S2S8ME-16 16GB
Kingston HP32D4S2S8ME-16 16GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-3600C18-32GVK 32GB
G Skill Intl F4-3600C18-32GVK 32GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Corsair CMD16GX4M4A2800C16 4GB
Corsair CMD16GX4M4A2800C16 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
内存RAM