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SK Hynix DDR2 800 2G 2GB
Kingston 9905744-066.A00G 32GB

SK Hynix DDR2 800 2G 2GB vs Kingston 9905744-066.A00G 32GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Kingston 9905744-066.A00G 32GB

Kingston 9905744-066.A00G 32GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.8
    测试中的平均数值
Kingston 9905744-066.A00G 32GB 需要考虑的原因
Kingston 9905744-066.A00G 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 77
    左右 -64% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Kingston 9905744-066.A00G 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 47
  • 读取速度，GB/s
    2,936.9 left arrow 17.8
  • 写入速度，GB/s
    1,884.0 left arrow 14.7
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3099

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Kingston 9905744-066.A00G 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMT16GX4M2C3200C16 8GB
Corsair CMT16GX4M2C3200C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
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G Skill Intl F4-3466C16-8GTZSK 8GB
G Skill Intl F4-3466C16-8GTZSK 8GB
内存RAM
Kingston 99U5315-023.A00LF 512MB
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Crucial Technology CT8G4SFRA266.C8FE 8GB
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Kingston 9905403-156.A00LF 2GB
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Corsair CMK16GX4M2G4000C16 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston KHX2400C15S4/4G 4GB
Kingston KHX2400C15S4/4G 4GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Apacer Technology 78.CAGPN.DF40B 8GB
Apacer Technology 78.CAGPN.DF40B 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C16-16GTZR 16GB
G Skill Intl F4-4000C16-16GTZR 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CM4X16GC3000C15D4 16GB
Corsair CM4X16GC3000C15D4 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM