SK Hynix DDR2 800 2G 2GB vs Micron Technology 16ATF2G64HZ-2G6H1 16GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 14.7

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G6H1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6H1 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 77

左右 -133% 更低的延时
更快的写入速度，GB/s

8.8 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 33
读取速度，GB/s

2,936.9 14.7
写入速度，GB/s

1,884.0 8.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 2498

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.D2GG7.AU30B 16GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Crucial Technology CT8G4DFS824A.M8FB 8GB

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Kingston KVR800D2N6/2G 2GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB