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SK Hynix DDR2 800 2G 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB

SK Hynix DDR2 800 2G 2GB vs Mushkin MR[A/B]4U280HHHH8G 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Mushkin MR[A/B]4U280HHHH8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.6
    测试中的平均数值
Mushkin MR[A/B]4U280HHHH8G 8GB 需要考虑的原因
Mushkin MR[A/B]4U280HHHH8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    72 left arrow 77
    左右 -7% 更低的延时
  • 更快的写入速度，GB/s
    8.5 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 72
  • 读取速度，GB/s
    2,936.9 left arrow 14.6
  • 写入速度，GB/s
    1,884.0 left arrow 8.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 1918

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Kingston 9905668-002.A00G 8GB
Kingston 9905668-002.A00G 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C15-4GRK 4GB
G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
DSL Memory D4SH1G081SH26A-C 8GB
DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMU16GX4M2A2666C16 8GB
Corsair CMU16GX4M2A2666C16 8GB
内存RAM