SK Hynix HMA451U6AFR8N-TF 4GB vs DSL Memory CIR-W4SUSS2408G 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

DSL Memory CIR-W4SUSS2408G 8GB

需要考虑的原因
DSL Memory CIR-W4SUSS2408G 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 37

左右 -68% 更低的延时
更快的读取速度，GB/s

17.6 14.7

测试中的平均数值
更快的写入速度，GB/s

13.2 10.6

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

DSL Memory CIR-W4SUSS2408G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 22
读取速度，GB/s

14.7 17.6
写入速度，GB/s

10.6 13.2
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2438 3024

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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HT Micron HTH5AN8G8NCJR-VKD 8GB

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G Skill Intl F4-4000C16-16GTRSA 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BLS4G4D240FSB.8FARG 4GB

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Corsair CMK64GX4M8X4133C19 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

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Corsair CMD64GX4M4A2666C15 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB