PNY Electronics PNY 2GB vs Corsair CMK8GX4M2A2133C13 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMK8GX4M2A2133C13 4GB

Corsair CMK8GX4M2A2133C13 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

Corsair CMK8GX4M2A2133C13 4GB

需要考虑的原因
Corsair CMK8GX4M2A2133C13 4GB

报告一个错误

更快的读取速度，GB/s

16.6 13.8

测试中的平均数值
更快的写入速度，GB/s

12.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMK8GX4M2A2133C13 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

13.8 16.6
写入速度，GB/s

8.4 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CB8GU2400.C8D 8GB

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Crucial Technology RM51264BA1339.16FD 4GB

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A-DATA Technology AD5U48008G-B 8GB

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Mushkin 99[2/7/4]199F 8GB

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Corsair CMX8GX3M2A2000C9 4GB

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Kingston XRMWRN-HYA 16GB

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G Skill Intl F4-3200C16-8GVS 8GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

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Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Corsair CMWX16GC3200C16W2E 16GB

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Samsung M378T5663QZ3-CF7 2GB

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Samsung M378A1K43CB2-CTD 8GB