SK Hynix HMA451U6AFR8N-TF 4GB vs Micron Technology 8ATF51264AZ-2G1AY 4GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

更快的读取速度，GB/s

14.7 13.8

测试中的平均数值
更快的写入速度，GB/s

10.6 8.7

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1AY 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1AY 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

14.7 13.8
写入速度，GB/s

10.6 8.7
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2438 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Crucial Technology CT32G4SFD8266.C16FB 32GB

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SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston KF548C38-16 16GB

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Crucial Technology CT16G48C40U5.M8A1 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT16G4DFS8266.C8FE 16GB

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Kingston 9965525-018.A00LF 4GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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SK Hynix HMA82GS6AFR8N-UH 16GB

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Kingston 9905403-515.A00LF 8GB

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Ramsta Ramsta-2666MHz-4G 4GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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Crucial Technology BL8G26C16U4B.8FE 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Samsung M378B5273CH0-CH9 4GB

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Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB