SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung M393A1G40DB1-CRC 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 48

左右 23% 更低的延时
更快的读取速度，GB/s

14.7 10.8

测试中的平均数值
更快的写入速度，GB/s

10.6 8.1

测试中的平均数值

Samsung M393A1G40DB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40DB1-CRC 8GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Samsung M393A1G40DB1-CRC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 48
读取速度，GB/s

14.7 10.8
写入速度，GB/s

10.6 8.1
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2438 2431

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2K3600C19 8GB

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Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-2133C15-4GRR 4GB

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Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMD32GX4M4A2400C12 8GB

Corsair CMD32GX4M4A2400C12 8GB