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SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CM4X16GC3200C16K2E 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB vs Corsair CM4X16GC3200C16K2E 16GB

总分
star star star star star
SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分
star star star star star
Corsair CM4X16GC3200C16K2E 16GB

Corsair CM4X16GC3200C16K2E 16GB

差异 规格 评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB 需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Corsair CM4X16GC3200C16K2E 16GB 需要考虑的原因
Corsair CM4X16GC3200C16K2E 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 36
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 10.1
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CM4X16GC3200C16K2E 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 32
  • 读取速度，GB/s
    15.0 left arrow 17.3
  • 写入速度，GB/s
    10.1 left arrow 13.4
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2657 left arrow 3422

SK Hynix HMA82GS6CJR8N-VK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CM4X16GC3200C16K2E 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT16G4SFRA32A.M16FR 16GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Samsung M471A2K43DB1-CTD 16GB
Samsung M471A2K43DB1-CTD 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C16-8GTZSK 8GB
G Skill Intl F4-3200C16-8GTZSK 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston MSI24D4S7S8MB-8 8GB
Kingston MSI24D4S7S8MB-8 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Golden Empire CL18-20-20 D4-3600 8GB
Golden Empire CL18-20-20 D4-3600 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905665-023.A00G 4GB
Kingston 9905665-023.A00G 4GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-2666C19-8GVK 8GB
G Skill Intl F4-2666C19-8GVK 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
JUHOR JHD3000U1908JG 8GB
JUHOR JHD3000U1908JG 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Transcend Information JM2666HLB-16G 16GB
Transcend Information JM2666HLB-16G 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM