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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C14-16GTRS 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C14-16GTRS 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
G Skill Intl F4-3600C14-16GTRS 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
23
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C14-16GTRS 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
77
左右 -235% 更低的延时
更快的写入速度,GB/s
21.1
2,622.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C14-16GTRS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
23
读取速度,GB/s
3,405.2
23.0
写入速度,GB/s
2,622.0
21.1
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
4565
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
G Skill Intl F4-3600C14-16GTRS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T5663CZ3-CE6 2GB
Mushkin 99[2/7/4]192F 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2133C15-4GIS 4GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Kingston 99U5474-028.A00LF 4GB
Kingston 9905713-017.A00G 4GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CM4X8GF2666C18S2 8GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Kingston 9965516-112.A00LF 16GB
A-DATA Technology DDR4 3200 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 8ATF1G64AZ-2G3E1 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CM4X8GE2133C13K4 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C18-8GVK 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905704-007.A00G 4GB
报告一个错误
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Bug description
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